Simultaneous two-state lasing in quantum-dot lasers

[Article] Ground-state power quenching in two-state lasing quantum dot lasers

Sub - 1100 nm lasing from post - growth intermixed InAs / GaAs quantum - dot lasers

Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼...

Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength.

A Strong temperature dependence of microdisk lasers and photonic crystal nanocavity lasers with InAs quantum dot active regions is reported. These lasers operate at 1.3 microm at room temperature under optical pumping conditions. T(0, microdisk) = 31 K. T(0, photonic crystal nanocavity) = 14 K. The lasing threshold dependence on the lasing wavelength is also reported. We observe a minimum absor...

Optically injected quantum-dot lasers.

The response of an optically injected quantum-dot semiconductor laser (SL) is studied both experimentally and theoretically. In particular, the nature of the locking boundaries is investigated, revealing features more commonly associated with Class A lasers rather than conventional Class B SLs. Experimentally, two features stand out; the first is an absence of instabilities resulting from relax...

Intraband carrier photoexcitation in quantum dot lasers.

We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (QD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements....